40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247

Model NO.
DGC40F120M2
Package
to-247
Application
Welding, UPS
Model
Dgc40f120m2
Batch Number
2023
Brand
Wxdh
Current
40A
Voltage
1200V
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year
Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg
Reference Price
$ 0.01 - 13.50
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Product Description

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage V CES 1200 V
Gate- Emitter Voltage V GES ±30 V
Collector Current I C (T=25ºC) 80 A
Collector Current  (Tc=100ºC) 40 A
Pulsed Collector Current I CM 160 A
Diode Continuous Forward Current I F  @TC = 100 °C 40 A
Diode Pulsed Current
I FM
160 A
Total Dissipation T C =25ºC P D 388 W
T C =100ºC P D 155 W
Junction Temperature T j -45~175 ºC
storage Temperature T stg -45~150 ºC
 
Features
Low Vcesat
Low gate charge
Excellent switching speed
Easy paralleling capability due to positive
temperature Coefficient in Vcesat
Tsc≥6 µs
Fast recovery full current anti-parallel diode
Applications
Welding
Three-level inverter
UPS
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DGC40F120M2
TO-247
DGC40F120M2
Pb-free Tube 1000/box
 

 

Semiconductor

PNEUTEC.IT, 2023