PARAMETER | SYMBOL | RATING | UNIT | ||
Collector-Emitter Voltage | V CES | 650 | V | ||
Gate- Emitter Voltage | V GES | ±30 | V | ||
Collector Current | (TJ=100ºC) | 50 | A | ||
Pulsed Collector Current | I CM | 150 | A | ||
Diode Continuous Forward Current | I F @TJ = 100 °C | 100 | A | ||
Diode Pulsed Current |
I
FM
|
160 | A | ||
Total Dissipation | T C =25ºC |
P
tot
|
50 | W | |
T C =100ºC |
P
tot
|
100 | W | ||
Junction Temperature | T j | -55~175 | ºC | ||
storage Temperature | T stg | -55~150 | ºC |
Features |
FS Trench Technology, Positive temperature
coefficient
|
Low saturation voltage: VCE(sat), typ = 1.8V
@ IC =50A and Tj = 25°C
|
Extremely enhanced avalanche capability
|
Applications |
Welding |
Three-level Inverter
|
UPS |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHG50T65DLBBW
|
TO-247
|
DHG50T65DLBBW
|
Pb-free | Tube | 1000/box |