| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | V CES | 650 | V | ||
| Gate- Emitter Voltage | V GES | ±30 | V | ||
| Collector Current | (TJ=100ºC) | 50 | A | ||
| Pulsed Collector Current | I CM | 150 | A | ||
| Diode Continuous Forward Current | I F @TJ = 100 °C | 100 | A | ||
| Diode Pulsed Current |
I
FM
|
160 | A | ||
| Total Dissipation | T C =25ºC |
P
tot
|
50 | W | |
| T C =100ºC |
P
tot
|
100 | W | ||
| Junction Temperature | T j | -55~175 | ºC | ||
| storage Temperature | T stg | -55~150 | ºC | ||
| Features |
|
FS Trench Technology, Positive temperature
coefficient
|
|
Low saturation voltage: VCE(sat), typ = 1.8V
@ IC =50A and Tj = 25°C
|
|
Extremely enhanced avalanche capability
|
| Applications |
| Welding |
|
Three-level Inverter
|
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
|
DHG50T65DLBBW
|
TO-247
|
DHG50T65DLBBW
|
Pb-free | Tube | 1000/box |