80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m

Model NO.
DGC80F65M
Package
to-247
Application
Welding, UPS
Model
Dgc80f65m
Batch Number
2023
Brand
Wxdh
Current
80A
Voltage
650V
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year
Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg
Reference Price
$ 0.01 - 13.50
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Product Description

80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m 80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m 80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m 80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage V CES 650 V
Gate- Emitter Voltage V GES ±30 V
Collector Current I C (T=25ºC) 160 A
Collector Current  (Tc=100ºC) 80 A
Pulsed Collector Current I CM 240 A
Diode Continuous Forward Current I F  @TC = 100 °C 80 A
Diode Pulsed Current
I FM
440 A
Total Dissipation T C =25ºC P D 220 W
T C =100ºC P D 155 W
Junction Temperature T j -45~175 ºC
storage Temperature T stg -45~150 ºC
 
Features
FS Trench Technology, Positive temperature
coefficient
Low saturation voltage: VCE(sat), typ = 1.8V
@ I C =80A and T j = 25°C
Extremely enhanced avalanche capability
Applications
Welding
Three-level inverter
UPS
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DGC80F65M TO-247 DGC80F65M Pb-free Tube 1000/box
 

 

Semiconductor

PNEUTEC.IT, 2023