40A 1200V PIM in one-package
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.
Features
|
Low gate charge
|
Excellent switching speed
|
Easy paralleling capability due to positive temperature
Coefficient in VCEsat
|
Tsc≥10μs
|
Fast recovery full current anti-parallel diode
|
Low VCEsat
|
Applications
|
Welding
|
UPS
|
Three-leve Inverter
|
AC to DC Converters
|
AC and DC servo drive amplifier
|
Type
|
VCE
|
IC
|
VCEsat,Tj=25ºC
|
Tjop
|
Package
|
DGC40C120M2T
|
1200V
|
40A (Tj=100ºC)
|
1.7V (Typ)
|
150ºC
|
EconOPACK2
|
Electrical Characteristics
5.1 Absolute Maximum Ratings (IGBT-inverter/IGBT-brake) (Tc=25ºC,unless otherwise specified)
PARAMETER
|
SYMBOL
|
VALUE
|
UNIT
|
|
|
|
Collector-to-Emitter Voltage
|
V
CE
|
1200
|
V
|
Gate-to-Emitter Voltage
|
V
GE
|
±30
|
V
|
DC Collector current
|
Ic
Tj=25ºC
|
80
|
A
|
Tj=100ºC
|
40
|
A
|
Pulsed Collector Current #1
|
I
CM
|
160
|
A
|
5.2 Absolute Maximum Ratings (Diode-inverter) (Tc=25ºC,unless otherwise specified)
PARAMETER
|
SYMBOL
|
VALUE
|
UNIT
|
|
|
|
Peak Repetitive Reverse Voltage
|
VRRM
|
1200
|
V
|
DC Blocking Voltage
|
V
R
|
1200
|
V
|
Average Rectified Forward Current
|
IF(AV)
|
40
|
A
|
Repetitive Peak Surge Current
|
IFRM
|
60
|
A
|
Nonrepetitive Peak Surge Current(single) /tp=1.0ms
|
IFSM
|
400
|
A
|
5.3 Absolute Maximum Ratings (Diode-rectifier) (Tc=25ºC,unless otherwise specified)
PARAMETER
|
SYMBOL
|
VALUE
|
UNIT
|
|
|
|
Peak Repetitive Reverse Voltage
|
VRRM
|
1600
|
V
|
Reverse does not repeat peak voltage / IRRM=5μA
|
VRSM
|
2000
|
V
|
Average Rectified Forward Current
|
IF(AV)
|
25
|
A
|
Nonrepetitive Peak Surge Current(single) / tp=10ms
|
IFSM
|
320
|
A
|
I2t-value / tp=10ms, sin 180°
|
I2t
|
512
|
A2s
|
5.4 Absolute Maximum Ratings (Diode-brake) (Tc=25ºC,unless otherwise specified)
PARAMETER
|
SYMBOL
|
VALUE
|
UNIT
|
|
|
|
Peak Repetitive Reverse Voltage
|
VRRM
|
1200
|
V
|
DC Blocking Voltage
|
V
R
|
1200
|
V
|
Average Rectified Forward Current
|
IF(AV)
|
20
|
A
|
Repetitive Peak Surge Current
|
IFRM
|
30
|
A
|
Nonrepetitive Peak Surge Current(single) /tp=1.0ms
|
IFSM
|
300
|
A
|
5.5 IGBT Module
PARAMETER
|
SYMBOL
|
VALUE
|
UNIT
|
|
|
|
Junction Temperature Range(inverter/brake)
|
Tjmax
|
-45~175
|
ºC
|
Junction Temperature Range(Diode-rectifier)
|
Tjmax
|
-45~150
|
ºC
|
Operating Junction Temperature
|
Tjop
|
-45~150
|
ºC
|
Storage Temperature Range
|
Tstg
|
-45~150
|
ºC
|
Isolation Voltage RMS,f=50Hz,t=1min
|
VISO
|
2500
|
A
|