Insulated Gate Bipolar Transistor IGBT G15n120d to-247

Model NO.
G15N120D
Package
to-247
Application
Inverter Welding Machine, UPS
Model
G15n120d
Batch Number
2023
Brand
Wxdh
Currency
15A
Voltage
1200V
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year
Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg
Reference Price
$ 0.01 - 13.50
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Product Description

Insulated Gate Bipolar Transistor IGBT G15n120d to-247 Insulated Gate Bipolar Transistor IGBT G15n120d to-247 Insulated Gate Bipolar Transistor IGBT G15n120d to-247 Insulated Gate Bipolar Transistor IGBT G15n120d to-247
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage V CES 1200 V
Gate- Emitter Voltage V GES ±20 V
Collector Current I C (T=25ºC) 30 A
Collector Current  (Tc=100ºC) 15 A
Pulsed Collector Current I CM 45 A
Diode Continuous Forward Current I F  @TC = 100 °C 15 A
Diode Maximum Forward Current I FM 45 A
Total Dissipation T C =25ºC P D 160 W
T C =100ºC P D 65 W
Junction Temperature T j 150 ºC
storage Temperature T stg -55~150 ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: V CE(sat) , typ = 2.0V
@ I C =15A and V GE =15V
Integrated FRD
Applications
Electromagnetic heating (IH) equipment such as induction cooker.
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G15N120D TO-247 G15N120D Pb-free Tube 300/box
 

 

Semiconductor

PNEUTEC.IT, 2023