Growth Method | Czochralski |
Crystal Structure | Trigonal |
Lattice Constant | a=b=5.148Å c=13.863 Å |
Melting Point | 1250ºC |
Curie Temperature | 1140ºC |
Density | 4.64(g/cm3) |
Mohs Hardness | 5(mohs) |
Transmission Wavelength | 0.4-2.9μm |
Refractive Index | |
Intensity of Spontaneous Polarization | 50×10C/cm |
Nonlinear Coefficient | d22 = 2.1 d31 = - 4.5 d33 = -0.27 (pmv-1) |
Electro-optic Coefficient | γ13=8.6,γ22=3.4,γ33=30.8,γ51=28.0,(pmv-1) |
Optical Damage Threshold | 250 MW/cm2 @ 1064 nm, 10nsec. |
Transmittance | 370~5000nm >68% |
(632.8nm) | |
Thermal Expansion | //a, 2.0 x 10-6 / K |
//c, 16.7 x 10-6 / K | |
Absorption Loss | @ 1064 nm < 0.1 %/cm |
Material | Domestic or foreign materials are selected based on clients' requests |
Dimension | Equal to or less than Ø4″ |
Dimensional Tolerance |
Z axis: ±0.3mm
X axis, Y axis: ±0.1mm |
Surface Quality | 10-5 |
Chamfer | Less than 0.5mm, 45 º±5 º |
Crystal Orientation Accuracy |
Z axis: 5′
X, Y axis:<10′ |
Flatness | v8 (632.8nm) |
Parallelism | <10′ |
Coating | R<0.2%(1064nm) |
Wavefront Distortion | <N4(633nm) |
Extinction Ratio | >400:1(633nm)φ6mm beam |
Package | Class 100 clean bag, Class 1000 super clean room |